Current Applied Physics

Current Applied Physics, Vol.12, No.6 Entire volume, number list

ISSN: 1567-1739 (Print)

In this Issue (39 articles)

1387 - 1412	A new era for liquid crystal research: Applications of liquid crystals in soft matter nano-, bio- and microtechnology Lagerwall JPF, Scalia G
1413 - 1420	Magnetic and microwave attenuation behavior of Al-substituted Co2W hexaferrites synthesized by sol-gel autocombustion process Ahmad M, Grossinger R, Kriegisch M, Kubel F, Rana MU
1421 - 1428	Nickel-cobalt oxide/activated carbon composite electrodes for electrochemical capacitors Chang SK, Zainal Z, Tan KB, Yusof NA, Yusoff WMDW, Prabaharan SRS
1429 - 1435	Rietveld refinement and impedance spectroscopy of calcium titanate Sindhu M, Ahlawat N, Sanghi S, Agarwal A, Dahiya R, Ahlawat N
1436 - 1444	Analysis of the electrical properties of p-n GaAs homojunction under dc and ac fields Farag AAM, Fadel M, Yahia IS
1445 - 1447	The thermal stability of atomic layer deposited HfLaOx: Material and electrical characterization Yang W, Sun QQ, Fang RC, Chen L, Zhou P, Ding SJ, Zhang DW
1448 - 1453	Effect of controlled O-2 impurities on N-2 afterglows of RF discharges Kang N, Lee M, Ricard A, Oh SG
1454 - 1458	Growth of very large grains in polycrystalline silicon thin films by the sequential combination of vapor induced crystallization using AlCl3 and pulsed rapid thermal annealing Ahn KM, Kang SM, Ahn BT
1459 - 1464	ZnS overlayer on in situ chemical bath deposited CdS quantum dot-assembled TiO2 films for quantum dot-sensitized solar cells Jung SW, Kim JH, Kim H, Choi CJ, Ahn KS
1465 - 1469	Chemical bonding states and atomic distribution within Zn(S,O) film prepared on CIGS/Mo/glass substrates by chemical bath deposition Ahn K, Jeon JH, Jeong SY, Kim JM, Ahn HS, Kim JP, Jeong ED, Cho CR
1470 - 1475	Polycrystalline silicon thin films prepared by Ni silicide induced crystallization and the dopant effects on the crystallization Peng SL, Feng N, Hu DK, He DY, Byun CW, Lee YW, Joo SK
1476 - 1480	Electroreduction of oxygen on Pd catalysts supported on Ti-modified carbon Bae SJ, Nahm KS, Kim P
1481 - 1484	Upconversion, avalanche effect and controlled optical switching in Yb3+, Ho3+ co-doped Ca12Al14O33 phosphor Verma RK, Singh SK, Rai SB
1485 - 1492	Nitrogen doped TiO2 nanoparticles decorated on graphene sheets for photocatalysis applications Khalid NR, Ahmed E, Hong ZL, Zhang YW, Ahmad M
1493 - 1496	Electrochemical DNA detection using Hoechst dyes in microfluidic chips Zhao HM, Li ZQ, Lee NY, Kim JS, Lee EC
1497 - 1502	Effect of neutral pressure on the He plasma flow measurement in a linear device Park EK, Woo HJ, Chung KS, Tanaka H, Kajita S, Ohno N
1503 - 1509	A study on the performance of metal-oxide-semiconductor-field-effect-transistors with asymmetric junction doping structure Park H, Choi B
1510 - 1514	Investigation of current-voltage and capacitance-voltage characteristics of Ag/perylene-monoimide/n-GaAs Schottky diode Simsir N, Safak H, Yuksel OF, Kus M
1515 - 1517	Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell Lee SB, Chang SH, Yoo HK, Yoon MJ, Yang SM, Kang BS
1518 - 1522	Thickness dependent surface microstructure evolution of bismuth thin film prepared by molecular beam deposition method Ahn Y, Kim YH, Kim SI, Jeong KH
1523 - 1528	Phase transition, dielectric and piezoelectric properties of NaNbO3-Bi0.5Li0.5TiO3 lead-free ceramics Fu LL, Lin DM, Zheng QJ, Wu XC, Wu L, Sun HL, Wan Y, Fan XM, Xu CG
1529 - 1535	Analysis of current-voltage and capacitance-voltage characteristics of perylene-monoimide/n-Si Schottky contacts Tugluoglu N, Karadeniz S
1536 - 1540	Fabrication and characterization of aluminum-doped zinc oxide Schottky diodes on n-GaN Han T, Shi Y, Wu H, Liu C
1541 - 1547	Cumulative ionizing effect from solar-terrestrial charged particles and cosmic rays for CubeSats as simulated with GEANT4 Seo YM, Kim YH, Park SH, Seon J
1548 - 1552	Compressed-exponential relaxations in supercooled liquid trehalose Seo JA, Kwon HJ, Kataoka K, Ohshima K, Shin DM, Kim HK, Hwang YH
1553 - 1560	Detection of pathogenic microorganisms using biosensor based on multi-walled carbon nanotubes dispersed in DNA solution Thuy NT, Tam PD, Tuan MA, Le AT, Tam LT, Thu VV, Hieu NV, Chien ND
1561 - 1565	Anodized aluminum oxide membranes of tunable porosity with platinum nanoscale-coating for photonic application Zhang Y, Son SJ, Ju H
1566 - 1574	Aerial image formation of quantum lithography for diffraction limit Kim SK
1575 - 1579	Microwave-induced fabrication of copper nanoparticle/carbon nanotubes hybrid material Leelaviwat N, Monchayapisut S, Poonjarernsilp C, Faungnawakij K, Kim KS, Charinpanitkul T
1580 - 1585	Anodic TiO2 nanotubes as anode electrode in Li-air and Li-ion batteries Lee BG, Nam SC, Choi J
1586 - 1590	Substitution mechanism of Ga for Zn site depending on deposition temperature for transparent conducting oxides Lee DH, Kim K, Chun YS, Kim S, Lee SY
1591 - 1595	Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors Xiao YG, Tang MH, Xiong Y, Li JC, Cheng CP, Jiang B, Cai HQ, Tang ZH, Lv XS, Gu XC, Zhou YC
1596 - 1599	Microelectrofluidic bench using UV-curable rigid polymer fabricated by rapid and low-temperature process Doh I, Youn S, Jin YH, Cho YH
1600 - 1605	Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD Kelekci O, Tasli P, Cetin SS, Kasap M, Ozcelik S, Ozbay E
1606 - 1610	Spectroscopic ellipsometry modeling of ZnO thin films with various O-2 partial pressures Cho EN, Park S, Yun I
1611 - 1614	Controllable tuning of the electronic transport in pre-designed graphene nanoribbon Zeng H, Zhao J, Wei JW, Xu DH, Leburton JP
1615 - 1618	Effects of annealing on ion-implanted Si for interdigitated back contact solar cell Kang MG, Lee JH, Boo H, Tark SJ, Hwang HC, Hwang WJ, Kang HO, Kim D
1619 - 1623	Analytic model for ZnO-thin film transistor under dark and UV illumination Mansouri S, Bourguiga R, Yakuphanoglu F
1624 - 1627	Electrical characteristics of homoepitaxial p-GaSb analyzed by the p-n junction: A correction on the Hall parameter of heteroepitaxial p-GaSb/SI-GaAs Kim JO, Noh SK