검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Reduced work function of graphene by metal adatoms Legesse M, El Mellouhi F, Bentria E, Madjet ME, Fisher TS, Kais S, Alharbi FH Applied Surface Science, 394, 98, 2017 |
| 2 |
Polyaniline coated copper for hydrogen storage and evolution in alkaline medium Padmapriya S, Harinipriya S, Sudha V, Kumar D, Pal S, Chaubey B International Journal of Hydrogen Energy, 42(32), 20453, 2017 |
| 3 |
Realization of Silicon nanotube tunneling FET on junctionless structure using single and multiple gate workfunction Ambika R, Keerthana N, Srinivasan R Solid-State Electronics, 127, 45, 2017 |
| 4 |
Nanoscale heterogeniety and workfunction variations in ZnO thin films Sharma A, Untch M, Quinton JS, Berger R, Andersson G, Lewis DA Applied Surface Science, 363, 516, 2016 |
| 5 |
Perfluorinated Ionomer-Modified Hole-Injection Layers: Ultrahigh-Workfunction but Nonohmic Contacts Belaineh D, Tan JK, Png RQ, Dee PF, Lee YM, Thi BNN, Ridzuan NS, Ho PKH Advanced Functional Materials, 25(34), 5504, 2015 |
| 6 |
Invisible high workfunction materials on heterogeneous surfaces Sharma A, Berger R, Lewis DA, Andersson GG Applied Surface Science, 327, 22, 2015 |
| 7 |
Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs Litta ED, Hellstrom PE, Ostling M Solid-State Electronics, 108, 24, 2015 |
| 8 |
Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition Kim CK, Ahn HJ, Moon JM, Lee S, Moon DI, Park JS, Cho BJ, Choi YK, Lee SH Solid-State Electronics, 114, 90, 2015 |
| 9 |
Dark currents in bulk heterojunction devices for imaging applications: The effect of a cathode interfacial layer Lee J, Kong J Current Applied Physics, 14(5), 649, 2014 |
| 10 |
Electrical characteristics and optimization of extended-drain MOS transistor with dual-workfunction-gate for mixed-signal applications Baek KJ, Na KY, Kim YS Solid-State Electronics, 100, 49, 2014 |