This paper presents the electrical characteristics of high-voltage (HV) extended-drain MOS (EDMOS) field-effect transistor with dual-workfunction-gate (DWFG) to enhance the device performance and device optimization for mixed-signal applications. For n-channel DWFG EDMOS device fabrication, the polycrystalline-silicon (poly-Si) gate on the source and drain side were doped by p+ and n+ ion implantation, respectively. The DWFG device with shorter p+ poly-Si gate length showed lower on-resistance (R-ON) characteristics compared to the conventional device. Therefore, the DWFG device with shorter p+ poly-Si gate length is suitable for switching applications. On the other hand, the best improvements in the drain conductance (g(ds)) and intrinsic voltage gain (A(V)), which is important parameters of analog circuits, were shown in the DWFG device with identical n+ and p+ poly-Si gate length. (C) 2014 Elsevier Ltd. All rights reserved.