| 1 |
Reduction of point defects and Cu surface composition in Cu(In,Ga)Se-2 film by Se annealing with a NaF overlayer at intermediate temperatures
Kim S, Ko YM, Kim ST, Choi YW, Park JK, Ahn BT
Current Applied Physics, 17(5), 820, 2017 |
| 2 |
Crystallographic and optical properties of CuGa3S5, CuGa3Se5 and CuIn3(S,Se)(5) and CuGa3(S,Se)(5) systems
Ueda K, Maeda T, Wada T
Thin Solid Films, 633, 23, 2017 |
| 3 |
Crystallographic, optical, and electronic properties of (Cu,Li)InS2 system
Maeda T, Zhao CY, Wada T
Thin Solid Films, 633, 172, 2017 |
| 4 |
Effects of thermal annealing on elimination of deep defects in amorphous In-Ga-Zn-O thin-film transistors
Tang HC, Ide K, Hiramatsu H, Ueda S, Ohashi N, Kumomi H, Hosono H, Kamiya T
Thin Solid Films, 614, 73, 2016 |
| 5 |
Effect of light illumination and temperature on P3HT films, n-type Si, and ITO
Scudiero L, Shen Y, Gupta MC
Applied Surface Science, 292, 100, 2014 |
| 6 |
Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin Silicon-on-insulator wafers
Tabe M, Kumezawa M, Ishikawa Y, Mizuno T
Applied Surface Science, 175, 613, 2001 |
