검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Quantum chemical study on the gas-phase reaction of tertiarybutylhydrazine: A potential nitrogen-bearing compound for GaN film growth Hsu YJ, Hong LS, Jiang JC Thin Solid Films, 498(1-2), 100, 2006 |
| 2 |
Effects of hydrogen on GaN metalorganic vapor-phase epitaxy using tertiarybutylhydrazine as nitrogen source Hsu YJ, Hong LS, Jiang JC, Chang JC Journal of Crystal Growth, 266(1-3), 347, 2004 |
| 3 |
Nitrogen-arsenic exchange process and investigation of the nitrided GaAs surfaces in MOVPE Hoffmann V, Poser F, Kaspari C, Weeke S, Pristovsek M, Richter W Journal of Crystal Growth, 272(1-4), 30, 2004 |
| 4 |
Metalorganic vapor-phase epitaxy of GaN from trimethylgallium and tertiarybutylhydrazine Hsu YJ, Hong LS, Tsay JE Journal of Crystal Growth, 252(1-3), 144, 2003 |
| 5 |
Nitrogen doping of MOVPE-grown ZnSe by hydrazine derivatives Pohl UW, Gottfriedsen J, Schumann H Journal of Crystal Growth, 209(4), 683, 2000 |