Dimethylhydrazine and tertiarybutylhydrazine were used as nitrogen sources in the metalorganic vapour-phase epitaxy of ZnSe:N/GaAs epilayers grown at typically 345 degrees C. Both compounds release reactive NH2 species in thermal decomposition well below growth temperature and induce efficient nitrogen incorporation. The achievement of high net acceptor concentrations is presently limited by residual donor impurities in the employed source materials.