| 1 |
Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
Lim D, Han H, Choi C
Solid-State Electronics, 154, 1, 2019 |
| 2 |
Investigation of transient current characteristics with scaling-down poly-Si body thickness and grain size of 3D NAND flash memory
Lee SH, Kwon DW, Kim S, Baek MH, Lee S, Kang J, Jang W, Park BG
Solid-State Electronics, 152, 41, 2019 |
| 3 |
Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions
Bae MS, Yun I
Solid-State Electronics, 156, 48, 2019 |
| 4 |
Effect of Al doping on performance of ZnO thin film transistors
Dong JC, Han DD, Li HJ, Yu W, Zhang SD, Zhang X, Wang Y
Applied Surface Science, 433, 836, 2018 |
| 5 |
Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping
Joseph HB, Singh SK, Hariharan RM, Priya PA, Kumar NM, Thiruvadigal DJ
Applied Surface Science, 449, 823, 2018 |
| 6 |
Structure properties and electrical mechanisms of Si(001)/SiO2 interface with varying Si layer thickness in nano-scale transistor
Li H, Ji A, Zhu C, Mao LF
Current Applied Physics, 18(9), 1020, 2018 |
| 7 |
Structure properties and electrical mechanisms of Si(001)/SiO2 interface with varying Si layer thickness in nano-scale transistor
Li H, Ji A, Zhu C, Mao LF
Current Applied Physics, 18(9), 1020, 2018 |
| 8 |
Improved gate bias stressing stability of IGZO thin film transistors using high-k compounded ZrO2/HfO2 nanolaminate as gate dielectric
Yang J, Yang X, Zhang YP, Che BW, Ding XW, Zhang JH
Molecular Crystals and Liquid Crystals, 676(1), 65, 2018 |
| 9 |
Performance enhancement of AlGaN/GaN nanochannel omega-FinFET
Im KS, Seo JH, Vodapally S, Kang IM, Lee JH, Cristoloveanu S, Lee JH
Solid-State Electronics, 129, 196, 2017 |
| 10 |
Steep subthreshold slope characteristics of body tied to gate NMOSFET in partially depleted SOI
Song L, Hu ZY, Liu ZL, Xin HW, Zhang ZX, Zou SC
Solid-State Electronics, 130, 15, 2017 |
