화학공학소재연구정보센터
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No. Article
1 Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD
Sozykin AS, Strelchenko SS, Prokolkin EV, Ladugin MA
Journal of Crystal Growth, 363, 253, 2013
2 Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 mu m band for silicon photonics
Rajesh M, Bordel D, Kawaguchi K, Faure S, Nishioka M, Augendre E, Clavelier L, Guimard D, Arakawa Y
Journal of Crystal Growth, 315(1), 114, 2011
3 High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers
Liu WS, Wu HM, Liao YA, Chyi JI, Chen WY, Hsu TM
Journal of Crystal Growth, 323(1), 164, 2011
4 Investigation of solution-processed amorphous SrInZnO thin film transistors
Yoon DH, Kim SJ, Jeong WH, Kim DL, Rim YS, Kim HJ
Journal of Crystal Growth, 326(1), 171, 2011
5 Growth of InI single crystals for nuclear detection applications
Bhattacharya P, Groza M, Cui Y, Caudel D, Wrenn T, Nwankwo A, Burger A, Slack G, Ostrogorsky AG
Journal of Crystal Growth, 312(8), 1228, 2010
6 Crystallization of In-Se/CuInSe2 thin-film stack by sequential electrodeposition and annealing
Oda Y, Matsubayashi M, Minemoto T, Takakura H
Journal of Crystal Growth, 311(3), 738, 2009
7 Crystal growth of InN by MOCVD with electric field along the c-axis
Ota Y, Biswas R, Higo M, Inushima T
Journal of Crystal Growth, 311(10), 2806, 2009
8 Tunable light emissions from thermally evaporated In2O3 nanostructures grown at different growth temperatures
Ko TS, Chu CP, Chen JR, Lu TC, Kuo HC, Wang SC
Journal of Crystal Growth, 310(7-9), 2264, 2008
9 The high mobility InN film grown by MOCVD with GaN buffer layer
Xie ZL, Zhang R, Liu B, Li L, Liu CX, Xiu XQ, Zhao H, Han P, Gu SL, Shi Y, Zheng YD
Journal of Crystal Growth, 298, 409, 2007
10 Effect of antimony on the density of InAs/Sb : GaAs(100) quantum dots grown by metalorganic chemical-vapor deposition
Guimard D, Nishioka M, Tsukamoto S, Arakawa Y
Journal of Crystal Growth, 298, 548, 2007