We report the synthesis of the In2O3 nanostructures grown at different growth temperatures by using the thermal evaporation method. The gold nanoparticles were used as the catalyst and were dispersed on the silicon wafer to facilitate the growth of In2O3 nanostructures. The nanostructures of the In2O3 were characterized by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The photo luminescence study reveals that In2O3 nanostructures could emit different luminescence peaks in the range of 400-600 nm with broad bands by adjusting different growth temperatures. The coverage of the wavelength tuning in the emission peaks of the In2O3 nanostructures could be beneficial for possible applications in white light illumination through manipulating the ratio of each wavelength component. (C) 2007 Elsevier B.V. All rights reserved.