검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes Besnard G, Garros X, Andrieu F, Nguyen P, Van den Daele W, Reynaud P, Schwarzenbach W, Delprat D, Bourdelle KK, Reimbold G, Cristoloveanu S Solid-State Electronics, 113, 127, 2015 |
| 2 |
Study of an embedded buried SiGe structure as a mobility booster for fully-depleted SOI MOSFETs at the 10 nm node Morvan S, Andrieu F, Barbe JC, Ghibaudo G Solid-State Electronics, 98, 50, 2014 |
| 3 |
Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: A comparative study Kumar M, Dubey S, Tiwari PK, Jit S Current Applied Physics, 13(8), 1778, 2013 |
| 4 |
High gate voltage drain current leveling off and its low-frequency noise in 65 nm fully-depleted strained and non-strained SOI nMOSFETs LukyanchikovA N, Garbar N, Kudina V, Smolanka A, Lokshin M, Simoen E, Claeys C Solid-State Electronics, 52(5), 801, 2008 |
| 5 |
Impact strain engineering on gate stack quality and reliability Claeys C, Simoen E, Put S, Giusi G, Crupi F Solid-State Electronics, 52(8), 1115, 2008 |
| 6 |
Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate Ogura A, Yoshida T, Kosemura D, Kakemura Y, Takei M, Saito H, Shimura T, Koganesawa T, Hirosawa I Solid-State Electronics, 52(12), 1845, 2008 |
| 7 |
Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structures Hoshi Y, Fukumoto A, Sawano K, Cayrefourcq I, Yoshimi M, Shiraki Y Thin Solid Films, 517(1), 340, 2008 |
| 8 |
Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS Kim K, Chuang CT, Rim K, Joshi RV Solid-State Electronics, 48(2), 239, 2004 |
| 9 |
Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Taraschi G, Pitera AJ, Fitzgerald EA Solid-State Electronics, 48(8), 1297, 2004 |
| 10 |
Power analysis of strained-Si device s/circuits Kim K, Joshi RV, Chuang CT Solid-State Electronics, 48(8), 1453, 2004 |