검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells Ochoa M, Algora C, Espinet-Gonzalez P, Garcia I Solar Energy Materials and Solar Cells, 120, 48, 2014 |
| 2 |
Current-voltage characteristics of GaSb homojunctions prepared by MOVPE Touskova J, Kindl D, Blahitka B, Tousek J, Hulicius E, Pangrac J, Samochin E, Simecek T, Vyborny Z Solid-State Electronics, 47(9), 1471, 2003 |
| 3 |
Determination of parameters of radiation induced traps in silicon Siemieniec R, Sudkamp W, Lutz J Solid-State Electronics, 46(6), 891, 2002 |
| 4 |
Computer-Simulation of the Photoluminescence Decay at the GaAs Electrolyte Junction .2. The Influence of the Excitation Intensity Under Depletion Layer Conditions Kruger O, Jung C, Gajewski H Journal of Physical Chemistry, 98(48), 12663, 1994 |