Irradiation techniques are nowadays widely used for carrier lifetime adjustment in silicon power devices because of their very good reproducibility. But still there are missing or incomplete recombination center data for use in device simulation. Based on DLTS and lifetime measurements, the center properties of the most important traps after electron irradiation and annealing with a temperature above 330 degreesC are determined in this work within a wide temperature range. These parameters have been used for device simulation of irradiated power diodes and correctly explain the temperature dependencies of forward voltage as well as of switching characteristics. (C) 2002 Elsevier Science Ltd. All rights reserved.