검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 mu m Guizani I, Bilel C, Habchi MM, Rebey A, El Jani B Thin Solid Films, 630, 66, 2017 |
| 2 |
Enhanced Luminescence of InGaN Light Emitting Diodes with Strain-Compensated Superlattice Barriers Tsai CL, Liu GS, Lee YS, Fan GC Journal of the Electrochemical Society, 157(3), H260, 2010 |
| 3 |
Electroabsorption modulator performance predicted from band-edge absorption spectra of bulk, quantum-well, and quantum-well-intermixed InGaAsP structures Morrison GB, Raring JW, Wang CS, Skogen EJ, Chang YC, Sysak M, Coldren LA Solid-State Electronics, 51(1), 38, 2007 |
| 4 |
Piezoelectric effects in InAs/GaAs(N11) self-assembled quantum dots Sanguinetti S, Gurioli M, Grilli E, Guzzi M, Henini M Thin Solid Films, 380(1-2), 198, 2000 |