The optical properties of p-type doped lattice matched GaNAsBi/GaAs single quantumwell (SQW) were theoretically studied in order to reach the maximum of absorption at 1.55 mu m telecommunication wavelength. The calculation was performed using a numerical method based on the mixture of a self-consistent procedure and the band anticrossing model. We investigated the effect of p doping density in thewell GaNAsBi on the subband energies, Fermi level and the confining hole density distribution for the specific couple (wellwidth, Bi composition), with respect to confinement conditions. The increase of doping density led to a shift of the fundamental transition to blue. The effect of the applied electric field on the physical parameters was also examined. It was found that unlike the n-type doping, p-type doping of the studied SQW obeys the restrictive conditions determined in this work. (C) 2016 Elsevier B.V. All rights reserved.