검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Structural defects in SiO2/SiC interface probed by a slow positron beam Maekawa M, Kawasuso A, Chen ZQ, Yoshikawa M, Suzuki R, Ohdaira T Applied Surface Science, 244(1-4), 322, 2005 |
| 2 |
Photoemission spectroscopic studies on oxide/SiC interfaces formed by dry and pyrogenic oxidation Hijikata Y, Yaguchi H, Ishida Y, Yoshikawa M, Kamiya T, Yoshida S Materials Science Forum, 457-460, 1341, 2004 |
| 3 |
Fabrication of double implanted (0001) 4H-SiC MOSFETs by using pyrogenic re-oxidation annealing Kosugi R, Kiritani N, Suzuki K, Yatsuo T, Adachi K, Fukuda K Materials Science Forum, 457-460, 1397, 2004 |
| 4 |
Effects of steam annealing on electrical characteristics of 3C-SiC metal-oxide-semiconductor structures Yoshikawa M, Kojima K, Ohshima T, Itoh H, Okada S, Ishida Y Materials Science Forum, 338-3, 1129, 2000 |