| 1 |
Drain-extended MOS transistors capable for operation at 10 V and at radio frequencies
Mai A, Rucker H
Solid-State Electronics, 65-66, 45, 2011 |
| 2 |
Simulation of GaN and AlGaN static induction transistors
Alptekin E, Aktas O
Solid-State Electronics, 50(5), 741, 2006 |
| 3 |
High power(500V-70A) and high gain(44-47) 4H-SiC bipolar junction transistors
Zhang J, Alexandrov P, Zhao JH
Materials Science Forum, 457-460, 1149, 2004 |
| 4 |
A 500V, very high current gain (beta=1517) 4H-SiC bipolar Darlington transistor
Zhang J, Alexandrov P, Zhao JH
Materials Science Forum, 457-460, 1165, 2004 |
| 5 |
A high voltage (1570V) 4H-SiC bipolar Darlington with current gain beta > 640 and tested in a half-bridge inverter up to 20A at V-Bus=900V
Zhao JH, Zhang J, Alexandrov P, Burke T
Materials Science Forum, 457-460, 1169, 2004 |
| 6 |
A high voltage (1,750V) and high current gain (beta=24.8) 4H-SiC bipolar junction transistor using a thin (12 mu m) drift layer
Zhao JH, Zhang J, Alexandrov P, Li X, Burke T
Materials Science Forum, 457-460, 1173, 2004 |
| 7 |
DC and RF performance of insulating gate 4H-SiC depletion mode Field Effect Transistors
Jonsson R, Wahab Q, Rudner S
Materials Science Forum, 457-460, 1225, 2004 |
