This paper reports the demonstration of a record high current gain high voltage 4H-SiC hybrid bipolar Darlington transistor. The DC current gain of the bipolar Darlington was measured up to 1517 at Ic=27.3A (Jc=284A/cm2) with Vce=20V at room temperature, which substantially surpasses the past record of a 500V Darlington with a DC current gain of 430. The differential specific on-resistance (R-SP_ON) is 12.9mOmega(.)cm(2) up to Ic=25.6A (Jc=267A/cm(2)) at Vce=7.0V. This high current gain SiC Darlington has a 7.8mA leakage current at a blocking voltage of 500V. At 150degreesC, the Darlington still maintains a high current gain of 1015 at Ic=20.3A (Jc=211A/cm(2)), Vce=20V, and a low leakage current of 6.5mA at 500V. The Darlington's R-SP_ON is increased to 19.0mOmega(.)cm(2) at Ic up to 16.4A (Jc=171A/cm(2)) at Vce=6.5V at 150degreesC. An inductively-loaded half-bridge switching measurement (320V-50A) at RT and 150degreesC is also reported.