검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Two-dimensional van der Waals nanosheet devices for future electronics and photonics Choi K, Lee YT, Im S Nano Today, 11(5), 626, 2016 |
| 2 |
Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain Munzenrieder N, Zysset C, Petti L, Kinkeldei T, Salvatore GA, Troster G Solid-State Electronics, 87, 17, 2013 |
| 3 |
Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS Danno K, Kimoto T, Matsunami H Materials Science Forum, 483, 355, 2005 |
| 4 |
SiC devices for high voltage high power applications Sugawara Y Materials Science Forum, 457-460, 963, 2004 |
| 5 |
Fabrication of mesa-type pn diodes without forward degradation on ultara-high-quality 6H-SiC substrate Tanaka Y, Ohno T, Oyanagi N, Nishizawa S, Suzuki T, Fukuda K, Yatsuo T, Arai K Materials Science Forum, 457-460, 1009, 2004 |
| 6 |
Fabrication and characterization of 4H-SiC pn diode with field limiting ring Bahng W, Song GH, Kim HW, Seo KS, Kim NK Materials Science Forum, 457-460, 1013, 2004 |
| 7 |
Electrical properties of pn diodes on 4H-SiC(000-1) C-face and (11-20) face Tanaka Y, Kojima K, Suzuki T, Hayashi T, Fukuda K, Yatsuo T, Arai K Materials Science Forum, 457-460, 1065, 2004 |
| 8 |
Analysis for structural defects in the 4H-SiC epilayers and their influence on electrical properties Izumi S, Kamata I, Tawara T, Fujisawa H, Tsuchida H Materials Science Forum, 457-460, 1085, 2004 |
| 9 |
4H-SiC pn diode grown by LPE method for high power applications Kuznetsov N, Bauman D, Gavrilin A, Kassamakova L, Kakanakov R, Sarov G, Cholakova T, Zekentes K, Dmitriev V Materials Science Forum, 433-4, 867, 2002 |
| 10 |
Impact of SiC structural defects on the degradation phenomenon of bipolar SiC devices Malhan RK, Nakamura H, Onda S, Nakamura D, Hara K Materials Science Forum, 433-4, 917, 2002 |