In order to realize a large current capability in spite of a small chip size which results from many crystal defects, SiC bipolar devices and their modules have been noticed. New SiC high voltage bipolar devices such as 6-19kV SiC pn diodes, 5kV SiC SIJFET (Static induction carrier Injected JFET) and 6-12.5kV SICGTs (SiC Commutated Gate turn-off Thyristors) have been developed in addition to a proposal of new 5kV SiC JGBT (Junction Gate Bipolar Transistor). These developed devices have remarkably superior performances as compared with similar Si bipolar devices. By using these devices, SiC high voltage modules such as 3kV 600A pn diode modules, 1.6kV 40A SIJFET modules and 4.5kV 30A SICGT modules have been developed. Furthermore, the application studies using these modules are proceeded in an electric power supply field and a 6.5kVA three phase PWM SICGT inverter, a load leveling system using the inverter and a 200kVA power quality stabilizer using the SiC pn diode modules have been developed.