화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Characterization of GaN grown on patterned Si(111) substrates
Wang D, Dikme Y, Jia S, Chen KJ, Lau KM, van Gemmern P, Lin YC, Kalisch H, Jansen RH, Heuken M
Journal of Crystal Growth, 272(1-4), 489, 2004
2 Selective surface migration for defect-free quantum dot ensembles using metal organic chemical vapor deposition
El-Emawy AA, Birudavolu S, Huang S, Xu H, Huffaker DL
Journal of Crystal Growth, 255(3-4), 213, 2003
3 Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD
Motlan, Goldys EM, Tansley TL
Journal of Crystal Growth, 236(4), 621, 2002
4 Lateral confined epitaxy of GaN layers on Si substrates
Zamir S, Meyler B, Salzman J
Journal of Crystal Growth, 230(3-4), 341, 2001