화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure
Jayachandran S, Billen A, Douhard B, Conard T, Meersschaut J, Moussa A, Caymax M, Bender H, Vandervorst W, Heyns M, Delabie A
Applied Surface Science, 384, 152, 2016
2 Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane
Abedin A, Moeen M, Cappetta C, Ostling M, Radamson HH
Thin Solid Films, 613, 38, 2016
3 Low temperature Si:C co-flow and hybrid process using Si3H8/Cl-2
Bauer M, Thomas SG
Thin Solid Films, 520(8), 3133, 2012
4 Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers
Shinriki M, Chung K, Hasaka S, Brabant P, He H, Adam TN, Sadana D
Thin Solid Films, 520(8), 3190, 2012
5 Thin crystalline silicon solar cells based on epitaxial films grown at 165 degrees C by RF-PECVD
Cariou R, Labrune M, Cabarrocas PRI
Solar Energy Materials and Solar Cells, 95(8), 2260, 2011
6 Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation
Dogan P, Rudigier E, Fenske F, Lee KY, Gorka B, Rau B, Conrad E, Gall S
Thin Solid Films, 516(20), 6989, 2008
7 GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3
Gautier S, Sartel C, Ould-Saad S, Martin J, Sirenko A, Ougazzaden A
Journal of Crystal Growth, 298, 428, 2007
8 Large-grained polycrystalline silicon films on glass by argon-assisted ECRCVD epitaxial thickening of seed layers
Ekanayake G, Quinn T, Reehal HS, Rau B, Gall S
Journal of Crystal Growth, 299(2), 309, 2007
9 Low-temperature epitaxy of silicon by electron beam evaporation
Gorka B, Dogan P, Sieber I, Fenske F, Gall S
Thin Solid Films, 515(19), 7643, 2007
10 Extended defects in Si films epitaxially grown by low-temperature ECRCVD
Rau B, Petter K, Sieber I, Stoger-Pollach M, Eyidi D, Schattschneider P, Gall S, Lips K, Fuhs W
Journal of Crystal Growth, 287(2), 433, 2006