| 1 |
Numerical investigation on the dispersion of hydrogen vapor cloud with atmospheric inversion layer
Jin T, Liu YL, Wei JJ, Zhang DY, Wang XX, Lei G, Wang TX, Lan YQ, Chen H
International Journal of Hydrogen Energy, 44(41), 23513, 2019 |
| 2 |
Interfacial negative capacitance in planar perovskite solar cells: An interpretation based on band theory
Feng YL, Bian JM, Wang MH, Wang S, Zhang CY, Dong QS, Zhang BY, Shi YT
Materials Research Bulletin, 107, 74, 2018 |
| 3 |
Interpretation of the degradation of silicon HIT solar cells due to inadequate front contact TCO work function
Ghannam M, Abdulraheem Y, Shehada G
Solar Energy Materials and Solar Cells, 145, 423, 2016 |
| 4 |
On the possible role of the interfacial inversion layer in the improvement of the performance of hydrogenated amorphous silicon/crystalline silicon heterojunction solar cells [HIT]
Ghannam M, Shehadah G, Abdulraheem Y, Poortmans J
Solar Energy Materials and Solar Cells, 132, 320, 2015 |
| 5 |
InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 band (k)over-right-arrow . (p)over-right-arrowtheory
Pham AT, Jin S, Choi W, Lee MJ, Cho SH, Kim YT, Lee KH, Park Y
Solid-State Electronics, 113, 79, 2015 |
| 6 |
On-current limitation of high-k gate insulator MOSFETs
Shih CH, Wang JS, Chien ND, Shia RK
Solid-State Electronics, 78, 87, 2012 |
| 7 |
Characterisation of micrometre-sized inversion layer emitters in crystalline Si
Wu JE, Aberle AG
Solar Energy Materials and Solar Cells, 90(18-19), 3471, 2006 |
| 8 |
Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility
Saks NS, Ancona MG, Lipkin LA
Materials Science Forum, 457-460, 689, 2004 |
| 9 |
Hall effect measurements in SiC buried-channel MOS devices
Saks NS, Ryu SH
Materials Science Forum, 457-460, 1287, 2004 |
| 10 |
An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers
Govoreanu B, Blomme P, Henson K, Van Houdt J, De Meyer K
Solid-State Electronics, 48(4), 617, 2004 |
