| 1 |
Efficiency of all-perovskite two-terminal tandem solar cells: A drift-diffusion study
Singh A, Gagliardi A
Solar Energy, 187, 39, 2019 |
| 2 |
TFET inverter static and transient performances in presence of traps and localized strain
Gnani E, Visciarelli M, Gnudi A, Reggiani S, Baccarani G
Solid-State Electronics, 159, 38, 2019 |
| 3 |
High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes
Osvald J, Lalinsky T, Vanko G
Applied Surface Science, 461, 206, 2018 |
| 4 |
Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors
Jia YF, Lv HL, Song QW, Tang XY, Xiao L, Wang LY, Tang GM, Zhang YM, Zhang YM
Applied Surface Science, 397, 175, 2017 |
| 5 |
Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNX passivation
Bai ZY, Du JF, Liu Y, Xin Q, Liu Y, Yu Q
Solid-State Electronics, 133, 31, 2017 |
| 6 |
Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
Ahmed N, Dutta AK
Solid-State Electronics, 132, 64, 2017 |
| 7 |
Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
Samnakay R, Balandin AA, Srinivasan P
Solid-State Electronics, 135, 37, 2017 |
| 8 |
Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing
Liu BB, Qin FW, Wang DJ
Applied Surface Science, 364, 769, 2016 |
| 9 |
Laser annealing of plasma-damaged silicon surface
Sameshima T, Hasumi M, Mizuno T
Applied Surface Science, 336, 73, 2015 |
| 10 |
The impact of stress-induced defects on MOS electrostatics and short-channel effects
Esqueda IS
Solid-State Electronics, 103, 167, 2015 |
