검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation Chen ZJ, Xu Y, Garfunkel E, Feldman LC, Buyuklimanli T, Ou W, Serfass J, Wan A, Dhar S Applied Surface Science, 317, 593, 2014 |
| 2 |
The interface of a-SiNx:H and Si: Linking the nano-scale structure to passivation quality Lamers M, Hintzsche LE, Butler KT, Vullum PE, Fang CM, Marsman M, Jordan G, Harding JH, Kresse G, Weeber A Solar Energy Materials and Solar Cells, 120, 311, 2014 |
| 3 |
Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films Lee YM, Wu YD Applied Surface Science, 254(15), 4591, 2008 |
| 4 |
XPS analysis of SiO2/SiC interface annealed in nitric oxide ambient Li HF, Dimitrijev S, Sweatman D, Harrison HB Materials Science Forum, 338-3, 399, 2000 |