| 1 |
Investigating degradation behaviors induced by hot carriers in the etch stop layer in amorphous InGaZnO thin film transistors with different electrode materials and structures
Yang CI, Chang TC, Chen BW, Chou WC, Liao PY, Lin SC, Yeh CY, Chang CS, Tsai CM, Yu MC
Thin Solid Films, 644, 45, 2017 |
| 2 |
Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density
Chae H, Shin S, Choi J, Seo S
Current Applied Physics, 15(11), 1412, 2015 |
| 3 |
Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs
Liu KJ, Chang TC, Yang RY, Chen CE, Ho SH, Tsai JY, Hsieh TY, Cheng O, Huang CT
Thin Solid Films, 572, 39, 2014 |
| 4 |
Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs
Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
Solid-State Electronics, 72, 8, 2012 |
| 5 |
Degradation of 1/f noise in short channel MOSFETs due to halo angle induced V-T non-uniformity and extra trap states at interface
Ahsan AKM, Ahmed S
Solid-State Electronics, 50(11-12), 1705, 2006 |
| 6 |
Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs
Sheu CJ, Jang SL
Solid-State Electronics, 47(4), 705, 2003 |
| 7 |
The influence of geometric structure on the hot-carrier-effect immunity for deep-sub-micron grooved gate PMOSFET
Ren HX, Hao Y
Solid-State Electronics, 46(5), 665, 2002 |
| 8 |
A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes
Mu FC, Xu MZ, Tan CH
Solid-State Electronics, 45(3), 435, 2001 |
| 9 |
A novel experimental technique: combined gated-diode method for extracting lateral distribution of interface traps in SOI NMOSFETs
He J, Zhang X, Huang A, Huang R
Solid-State Electronics, 45(7), 1107, 2001 |
| 10 |
A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique
Mahapatra S, Rao VR, Vasi J, Cheng B, Woo JCS
Solid-State Electronics, 45(10), 1717, 2001 |
