검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Study the effect of distribution of density of states on the depletion width of organic Schottky contacts Takshi A, Mohammadi M, Madden JD Solid-State Electronics, 52(11), 1717, 2008 |
| 2 |
Transition from partial to full depletion in advanced SOI MOSFETs: Impact of channel length and temperature Zaouia S, Cristoloveanu S, Sureddin M, Goktepeli S, Perera AH Solid-State Electronics, 51(2), 252, 2007 |
| 3 |
Impact of floating silicon film on small-signal parameters of fully depleted SOI-MOSFETs biased into accumulation Wiatr M, Seegebrecht P Solid-State Electronics, 49(5), 779, 2005 |
| 4 |
Fringing fields in sub-0.1 mu m fully depleted SOI MOSFETs: optimization of the device architecture Ernst T, Tinella C, Raynaud C, Cristoloveanu S Solid-State Electronics, 46(3), 373, 2002 |
| 5 |
Suppression of short channel effects by full inversion in deep sub-micron gate SOI MOSFETs Hanajiri T, Toyabe T, Sugano T Solid-State Electronics, 45(12), 2077, 2001 |