In this paper the impact of a floating silicon film in a fully depleted SOI-MOSFET is analyzed. A comprehensive explanation for the anomalous behavior of small-signal parameters of such SOI transistors is given and emphasized by the implementation into a physically based compact model, which is capable for circuit simulation of dual-gate transistors. A comparison of modeled small-signal parameters with results of numerical device simulation confirms the presented, truly physical approach for the modeling of floating-body effects in fully depleted SOI-MOSFETs. (c) 2005 Elsevier Ltd. All rights reserved.