검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Scaling and carrier transport behavior of buried-channel In0.7Ga0.3As MOSFETs with Al2O3 insulator Kim T, Kim DH Solid-State Electronics, 111, 218, 2015 |
| 2 |
Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer Chong E, Jeon YW, Chun YS, Kim DH, Lee SY Thin Solid Films, 519(13), 4347, 2011 |
| 3 |
Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel Liu LJ, Chang-Liao KS, Keng WC, Wang TK Solid-State Electronics, 54(10), 1113, 2010 |
| 4 |
Design and optimization of a buried channel PMOS integrable in a Si1-xGexBiCMOS process Khare P, Schroder D, Sampson K Solid-State Electronics, 51(6), 828, 2007 |
| 5 |
Fabrication of buried hybrid sol-gel optical waveguides by femtosecond laser direct writing Pani SK, Quiling Y, Wong CC, Low DKY, Zhang X, Iyer MK Thin Solid Films, 504(1-2), 336, 2006 |
| 6 |
Analysis of low on-resistance in 4H-SiC Double-Epitaxial MOSFET Harada S, Okamoto M, Yatsuo T, Fukuda K, Arai K Materials Science Forum, 483, 813, 2005 |
| 7 |
Mobility and performance enhancement in compressively strained SiGe channel PMOSFETs Shi ZH, Onsongo D, Banerjee SK Applied Surface Science, 224(1-4), 248, 2004 |
| 8 |
Hall effect measurements in SiC buried-channel MOS devices Saks NS, Ryu SH Materials Science Forum, 457-460, 1287, 2004 |
| 9 |
Fabrication of 4H-SiC double-epitaxial MOSFETs Harada S, Okamoto M, Yatsuo T, Adachi K, Suzuki K, Suzuki S, Fukuda K, Arai K Materials Science Forum, 457-460, 1421, 2004 |
| 10 |
Substrate bias amplification of a SiC junction field effect transistor with a catalytic gate electrode Nakagomi S, Takahashi M, Kokubun Y, Uneus L, Savage S, Wingbrant H, Andersson M, Lundstrom I, Lofdahl M, Spetz AL Materials Science Forum, 457-460, 1507, 2004 |