화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric
Roeckerath M, Heeg T, Lopes JMJ, Schubert J, Mantl S, Besmehn A, Myllymaki P, Niinisto L
Thin Solid Films, 517(1), 201, 2008
2 Preparation and characterization of rare earth scandates as alternative gate oxide materials
Wagner M, Heeg T, Schubert J, Zhao C, Richard O, Caymax M, Afanas'ev VV, Mantl S
Solid-State Electronics, 50(1), 58, 2006
3 Mist deposited high-k dielectrics for next generation MOS gates
Lee DO, Roman P, Wu CT, Mumbauer P, Brubaker M, Grant R, Ruzyllo J
Solid-State Electronics, 46(11), 1671, 2002