This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition in a cluster tool for advanced MOS gates. Electrical characterization was performed in conjunction with atomic force microscopy and transmission electron microscopy. It was determined that not all compositions investigated are equally compatible with mist deposition. The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated the sequence depositing SrTa2O6 on a nitrided oxide interlayer grown by a UV/NO process showed the best promise. (C) 2002 Elsevier Science Ltd. All rights reserved.