검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices Loubet N, Adam T, Raymond M, Liu Q, Cheng KG, Sreenivasan R, Reznicek A, Khare P, Kleemeier W, Paruchuri V, Doris B, Sampson R Thin Solid Films, 520(8), 3149, 2012 |
| 2 |
Pre-doping effects on Ni fully silicided metal gate on SiO2 dielectric Wang BM, Ru GP, Jiang YL, Qu XP, Li BZ, Liu R Applied Surface Science, 255(5), 1744, 2008 |
| 3 |
Characterization of electrical properties in high-dose implanted and post-implantation-annealed 4H-SiC wafers using infrared reflectance spectroscopy Narita K, Hijikata Y, Yaguchi H, Yoshida S, Senzaki J, Nakashima S Materials Science Forum, 457-460, 905, 2004 |
| 4 |
Investigation of two-stage activation annealing of Al-implanted 4H-SiC layers Merrett JN, Scofield JD, Tsao BH, Mazzola M, Seale D, Draper WA, Sankin I, Casady JB, Bondarenko V Materials Science Forum, 457-460, 921, 2004 |
| 5 |
Suppression of macrostep formation in 4H-SiC using a cap oxide layer Bahng W, Kim NK, Kim SC, Song GH, Kim ED Materials Science Forum, 389-3, 863, 2002 |
| 6 |
Damage relaxation pre-activation anneal in Al-implanted SiC Bahng W, Song GH, Kim NK, Kim SC, Seo KS, Kim HW, Kim ED Materials Science Forum, 433-4, 617, 2002 |