화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Tensile strain in Si due to expansion of lattice spacings in CeO2 epitaxially grown on Si(111)
Nishikawa Y, Matsushita D, Satou N, Yoshiki M, Schimizu T, Yamaguchi T, Satake H, Fukushima N
Journal of the Electrochemical Society, 151(9), F202, 2004
2 Novel field emitter array technology for subhalf-micron diameter gates
Yoshiki M, Furutake N, Takemura H, Okamoto A, Miyano S
Journal of Vacuum Science & Technology B, 17(2), 567, 1999
3 Fully Large-Scale Integration-Process-Compatible Si Field Emitter Technology with High Controllability of Emitter Height and Sharpness
Takemura H, Furutake N, Nisimura M, Tsuida S, Yoshiki M, Okamoto A, Miyano S
Journal of Vacuum Science & Technology B, 15(2), 488, 1997
4 Chiral Director Field in the Nematic Liquid-Crystal Phase Induced by a Poly(Gamma-Benzyl Glutamate) Chemical-Reaction Alignment Film
Machida S, Urano TI, Sano K, Kawata Y, Sunohara K, Sasaki H, Yoshiki M, Mori Y
Langmuir, 11(12), 4838, 1995