We have successfully developed a novel field emitter array (FEA) technology with low leakage current between each emitter and its subhalf-micron diameter gate. The device has two features: (1) a locally oxidized layer and (2) an additional Si3N4 layer as a second insulator layer. In a fabricated FEA with a 0.38-mu m-diam gate, the insulator thickness was 0.26 mu m, two times thicker than that of the conventional structure, and the creeping distance was ten times longer. Its emission. threshold voltage is 32 V, and its leakage current has been reduced to less than a tenth of previous levels.