검색결과 : 10건
No. | Article |
---|---|
1 |
Taganito HPAL Plant Project Shibayama K, Yokogawa T, Sato H, Enomoto M, Nakai O, Ito T, Mizuno F, Hattori Y Minerals Engineering, 88, 61, 2016 |
2 |
Involvement of plasmin-mediated extracellular activation of progalanin in angiogenesis Yamamoto H, Okada R, Iguchi K, Ohno S, Yokogawa T, Nishikawa K, Unno K, Hoshino M, Takeda A Biochemical and Biophysical Research Communications, 430(3), 999, 2013 |
3 |
Purification and comparison of native and recombinant tRNA-guanine transglycosylases from Methanosarcina acetivorans Nomura Y, Onda Y, Ohno S, Taniguchi H, Ando K, Oka N, Nishikawa K, Yokogawa T Protein Expression and Purification, 88(1), 13, 2013 |
4 |
Generality of a power-law long-term correlation in beat timings of single cardiac cells Yokogawa T, Harada T Biochemical and Biophysical Research Communications, 387(1), 19, 2009 |
5 |
Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system Yokogawa T, Ishibashi K, Sakuraba M, Murota J, Inokuchi Y, Kunii Y, Kurokawa H Applied Surface Science, 254(19), 6090, 2008 |
6 |
The beta subunit of Aquifex aeolicus leucyl-tRNA synthetase is responsible for cognate tRNA recognition Gouda M, Yokogawa T, Nishikawa K Biochemical and Biophysical Research Communications, 297(4), 950, 2002 |
7 |
Surface morphology of SiC epitaxial layers grown by vertical hot-wall type CVD Takahashi K, Uchida M, Yokogawa T, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M Materials Science Forum, 389-3, 243, 2002 |
8 |
Delta-doped layers of SiC grown by'pulse doping' technique Takahashi K, Yokogawa T, Uchida M, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M Materials Science Forum, 389-3, 247, 2002 |
9 |
4H-SiC delta-doped accumulation-channel MOS FET Yokogawa T, Takahashi K, Kusumoto O, Uchida M, Yamashita K, Kitabatake M Materials Science Forum, 389-3, 1077, 2002 |
10 |
SiC vertical DACFET (Vertical delta-doped accumulation channel MOSFET) Kusumoto O, Yokogawa T, Yamashita K, Takahashi K, Kitabatake M, Uchida M, Miyanaga R Materials Science Forum, 389-3, 1211, 2002 |