화학공학소재연구정보센터
검색결과 : 27건
No. Article
1 transoid and cisoid Conformations in Silver-Mediated Cytosine Base Pairs: Hydrogen Bonding Dictates Argentophilic Interactions in the Solid State
Mistry L, Waddell PG, Wright NG, Horrocks BR, Houlton A
Inorganic Chemistry, 58(19), 13346, 2019
2 Preparation, Characterization and Scanned Conductance Microscopy Studies of DNA-Templated One-Dimensional Copper Nanostructures
Watson SMD, Wright NG, Horrocks BR, Houlton A
Langmuir, 26(3), 2068, 2010
3 Self-assembly of DNA-templated polypyrrole nanowires: Spontaneous formation of conductive nanoropes
Pruneanu S, Al-Said SAF, Dong LQ, Hollis TA, Galindo MA, Wright NG, Houlton A, Horrocks BR
Advanced Functional Materials, 18(16), 2444, 2008
4 DNA-templated semiconductor nanoparticle chains and wires
Dong LQ, Hollis T, Connolly BA, Wright NG, Horrocks BR, Houlton A
Advanced Materials, 19(13), 1748, 2007
5 Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate
Mahapatra R, Chakraborty AK, Poolamai N, Horsfall A, Chattopadhyay S, Wright NG, Coleman KS, Coleman PG, Burrows CP
Journal of Vacuum Science & Technology B, 25(1), 217, 2007
6 Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode
Saha AR, Dimitriu CB, Horsfall AB, Chattopadhyay S, Wright NG, O'Neill AG, Maiti CK
Applied Surface Science, 252(11), 3933, 2006
7 Optical centres with local vibrational modes created by high temperature annealing of electron irradiated 4H and 6H silicon carbide
Steeds JW, Furkert SA, Sullivan W, Hayes JM, Wright NG
Materials Science Forum, 483, 347, 2005
8 Aluminium implantation induced linear surface faults in 4H-SiC
Wright NG, Vassilevski KV, Nikitina I, Horsfall AB, Johnson CM, Bhatnagar P, Tappin P
Materials Science Forum, 483, 613, 2005
9 Effective edge termination design in SiCVJFET
Bhatnagar P, Horsfall AB, Wright NG, O'Neill AG, Vassilevski KV, Johnson CM
Materials Science Forum, 483, 877, 2005
10 Optimisation of heterostructure bipolar transistors in SiC
Chen CC, Horsfall AB, Wright NG, O'Neill AG
Materials Science Forum, 483, 913, 2005