검색결과 : 24건
No. | Article |
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1 |
Characterization of the interface-driven 1st Reset operation in HfO2-based 1T1R RRAM devices Perez E, Mahadevaiah MK, Zambelli C, Olivo P, Wenger C Solid-State Electronics, 159, 51, 2019 |
2 |
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2 Grossi A, Zambelli C, Olivo P, Crespo-Yepes A, Martin-Martinez J, Rodriguez R, Nafria M, Perez E, Wenger C Solid-State Electronics, 128, 187, 2017 |
3 |
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays Grossi A, Zambelli C, Olivo P, Miranda E, Stikanov V, Walczyk C, Wenger C Solid-State Electronics, 115, 17, 2016 |
4 |
Dielectrophoretic immobilization of proteins: Quantification by atomic force microscopy Laux EM, Knigge X, Bier FF, Wenger C, Holzel R Electrophoresis, 36(17), 2094, 2015 |
5 |
Functionality of dielectrophoretically immobilized enzyme molecules Laux EM, Kaletta UC, Bier FF, Wenger C, Holzel R Electrophoresis, 35(4), 459, 2014 |
6 |
Metal-organic chemical vapor deposition of high-k dielectric Ce-Al-O layers from various metal-organic precursors for metal-insulator-metal capacitor applications Abrutis A, Lukosius M, Skapas M, Stanionyte S, Kubilius V, Wenger C, Zauner A Thin Solid Films, 536, 68, 2013 |
7 |
CexAlyOz/TiN stack analysis for Metal-Insulator-Metal applications: Effect of annealing and the metal electrode deposition method Kaynak CB, Lukosius M, Tillack B, Wenger C, Abrutis A, Skapas M Thin Solid Films, 520(14), 4518, 2012 |
8 |
Optical properties and band gap characterization of high dielectric constant oxides Fursenko O, Bauer J, Lupina G, Dudek P, Lukosius M, Wenger C, Zaumseil P Thin Solid Films, 520(14), 4532, 2012 |
9 |
Resistive switching of HfO2-based Metal-Insulator-Metal diodes: Impact of the top electrode material Bertaud T, Walczyk D, Walczyk C, Kubotsch S, Sowinska M, Schroeder T, Wenger C, Vallee C, Gonon P, Mannequin C, Jousseaume V, Grampeix H Thin Solid Films, 520(14), 4551, 2012 |
10 |
Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal-Insulator-Metal capacitors Lukosius M, Kaynak CB, Kubotsch S, Blomberg T, Ruhl G, Wenger C Thin Solid Films, 520(14), 4576, 2012 |