화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 63(1), 119, 2011
2 A parasitic resistance measurement method exploiting gate current-density characteristics in ultra-short Schottky-gate FETs
Inoue T, Contrata W
Solid-State Electronics, 52(11), 1735, 2008