Gate forward current-density characteristics of ultra-short Schottky-gates are studied with experiments and calculation to clarify the mechanism of inhomogeneity in the current density along the gate length. Then, by exploiting the gate current-density characteristics, a new DC measurement method is proposed to evaluate the parasitic source and drain resistances, R-s and R-d, in the Schottky-gate FETs. The method is based on a gate-probing end-resistance technique, which can evaluate the values R-s and R-d simply and accurately by using DC measurement, even if the device has an ultra-short gate length L-g of less than 0.15 mu m, because it applies a bias larger than a built-in voltage V-bi of the Schottky junction to the gate electrode in order to eliminate inhomogeneities in the gate current-density characteristics. (C) 2008 Elsevier Ltd. All rights reserved.