화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device
Zhang L, Xu HY, Wang ZQ, Yu H, Ma JG, Liu YC
Applied Surface Science, 360, 338, 2016
2 Relationship between nature of metal-oxide contacts and resistive switching properties of copper oxide thin film based devices
Singh B, Mehta BR
Thin Solid Films, 569, 35, 2014
3 32 x 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory
Kim GH, Lee JH, Ahn Y, Jeon W, Song SJ, Seok JY, Yoon JH, Yoon KJ, Park TJ, Hwang CS
Advanced Functional Materials, 23(11), 1440, 2013
4 Study on the dynamic resistance switching properties of NiO thin films
Kugeler C, Weng R, Schroeder H, Symanczyk R, Majewski P, Ufert KD, Waser R, Kund M
Thin Solid Films, 518(8), 2258, 2010
5 Unipolar resistive switching behavior of BiFeO3 thin films prepared by chemical solution deposition
Chen SW, Wu JM
Thin Solid Films, 519(1), 499, 2010