1 |
PureGaB p(+)n Ge diodes grown in large windows to Si with a sub-300 nm transition region Sammak A, Qi L, de Boer WB, Nanver LK Solid-State Electronics, 74, 126, 2012 |
2 |
Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo Martin-Bragado I, Zographos N Solid-State Electronics, 55(1), 25, 2011 |
3 |
Boron-layer silicon photodiodes for high-efficiency low-energy electron detection Sakic A, Nanver LK, Scholtes TLM, Heerkens CTH, Knezevic T, van Veen G, Kooijman K, Vogelsang P Solid-State Electronics, 65-66, 38, 2011 |
4 |
Fabrication of 0.12 mu m pMOSFETs on high Ge fraction Si/Si1-xGex/Si(100) heterostructure with ultrashallow source/drain formed using B-doped SiGeCVD Lee D, Takehiro S, Sakuraba M, Murota J, Tsuchiya T Applied Surface Science, 224(1-4), 254, 2004 |
5 |
High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS Kimura K, Oota Y, Nakajima K, Buyuklimanli TH Current Applied Physics, 3(1), 9, 2003 |
6 |
Role of hydrogen during rapid vapor-phase doping analyzed by x-ray photoelectron spectroscopy and Fourier-transform infrared-attenuated total reflection Kiyota Y, Yano F, Suzuki S, Inada T Journal of Vacuum Science & Technology A, 16(1), 1, 1998 |
7 |
Control of Surface Concentration of Boron or Phosphorus Employing Ion Shower Doping Kasamatsu A, Takakubo H, Shono K Journal of the Electrochemical Society, 143(2), 712, 1996 |