화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 PureGaB p(+)n Ge diodes grown in large windows to Si with a sub-300 nm transition region
Sammak A, Qi L, de Boer WB, Nanver LK
Solid-State Electronics, 74, 126, 2012
2 Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo
Martin-Bragado I, Zographos N
Solid-State Electronics, 55(1), 25, 2011
3 Boron-layer silicon photodiodes for high-efficiency low-energy electron detection
Sakic A, Nanver LK, Scholtes TLM, Heerkens CTH, Knezevic T, van Veen G, Kooijman K, Vogelsang P
Solid-State Electronics, 65-66, 38, 2011
4 Fabrication of 0.12 mu m pMOSFETs on high Ge fraction Si/Si1-xGex/Si(100) heterostructure with ultrashallow source/drain formed using B-doped SiGeCVD
Lee D, Takehiro S, Sakuraba M, Murota J, Tsuchiya T
Applied Surface Science, 224(1-4), 254, 2004
5 High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS
Kimura K, Oota Y, Nakajima K, Buyuklimanli TH
Current Applied Physics, 3(1), 9, 2003
6 Role of hydrogen during rapid vapor-phase doping analyzed by x-ray photoelectron spectroscopy and Fourier-transform infrared-attenuated total reflection
Kiyota Y, Yano F, Suzuki S, Inada T
Journal of Vacuum Science & Technology A, 16(1), 1, 1998
7 Control of Surface Concentration of Boron or Phosphorus Employing Ion Shower Doping
Kasamatsu A, Takakubo H, Shono K
Journal of the Electrochemical Society, 143(2), 712, 1996