Current Applied Physics, Vol.3, No.1, 9-11, 2003
High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS
Depth profiles of ultralow energy (0.2-0.5 keV) B ion implants in Si(0 0 1) samples are measured by high-resolution Rutherford backscattering spectroscopy. The boron profile does not show a narrow surface concentration peak which is usually observed in the measurement of secondary ion mass spectroscopy. The obtained boron profiles roughly agree with TRIM simulation even at 0.2-keV B ion implantation. (C) 2002 Elsevier Science B.V. All rights reserved.