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Electrical and structural characteristics of sputtered c-oriented AlN thin films on Si (100) and Si (110) substrates Pandey A, Kaushik J, Dutta S, Kapoor AK, Kaur D Thin Solid Films, 666, 143, 2018 |
2 |
Time evolution of secondary electron emission and trapped charge accumulation in polyimide film under various primary electron irradiation currents Song BP, Zhou RD, Su GQ, Mu HB, Zhang GJ, Bu RA Applied Surface Science, 390, 346, 2016 |
3 |
Trap-assisted recombination in disordered organic semiconductors extended by considering density dependent mobility Sun L, Sun JX, Xiong CH, Shi XH Solar Energy, 135, 308, 2016 |
4 |
Dependence of secondary electron emission on surface charging in sapphire and polycrystalline alumina: Evaluation of the effective cross sections for recombination and trapping Said K, Damamme G, Ahmed AS, Moya G, Kallel A Applied Surface Science, 297, 45, 2014 |
5 |
Electrical characteristics of insulating aluminum nitride MIS nanostructures Abdallah B, Al-Khawaja S, Alkhawwam A Applied Surface Science, 258(1), 419, 2011 |
6 |
Steam annealing effects on CV characteristics of MOS structures on (11(2)over-bar-0) face of 4H-SiC Yoshikawa M, Ohshima T, Itoh H, Takahashi K, Kitabatake M Materials Science Forum, 353-356, 635, 2001 |
7 |
Effects of steam annealing on electrical characteristics of 3C-SiC metal-oxide-semiconductor structures Yoshikawa M, Kojima K, Ohshima T, Itoh H, Okada S, Ishida Y Materials Science Forum, 338-3, 1129, 2000 |