| 1 |
High temperature molten flux growth, structural and optical characteristics of KTiOPO4:Ho and KTiOPO4:Er single crystals
Sadhasivam S, Perumal RN
Journal of Crystal Growth, 512, 152, 2019 |
| 2 |
Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process
Horiuchi T, Wang L, Sekimoto A, Okano Y, Ujihara T, Dost S
Journal of Crystal Growth, 517, 59, 2019 |
| 3 |
Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method
Wang L, Horiuchi T, Sekimoto A, Okano Y, Ujihara T, Dost S
Journal of Crystal Growth, 520, 72, 2019 |
| 4 |
Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC
Wang L, Horiuchi T, Sekimoto A, Okano Y, Ujihara T, Dost S
Journal of Crystal Growth, 498, 140, 2018 |
| 5 |
Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation
Yamamoto T, Okano Y, Ujihara T, Dost S
Journal of Crystal Growth, 470, 75, 2017 |
| 6 |
Top-seeded solution growth of SrTiO3 single crystals virtually free of mosaicity
Guguschev C, Kok DJ, Juda U, Uecker R, Sintonen S, Galazka Z, Bickermann M
Journal of Crystal Growth, 468, 305, 2017 |
| 7 |
Bulk growth and magneto-optical property of K3B6O10Br polar crystal
Xia MJ, Li CS, Li RK
Journal of Crystal Growth, 468, 710, 2017 |
| 8 |
Two-step SiC solution growth for dislocation reduction
Murayama K, Hori T, Harada S, Xiao S, Tagawa M, Ujihara T
Journal of Crystal Growth, 468, 874, 2017 |
| 9 |
Morphological stability of 4H-SiC crystals in solution growth on {0001} and {1(1)over-bar0m} surfaces
Mitani T, Komatsu N, Hayashi Y, Kato T, Okumura H
Journal of Crystal Growth, 468, 883, 2017 |
| 10 |
Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method
Yamamoto T, Adkar N, Okano Y, Ujihara T, Dost S
Journal of Crystal Growth, 474, 50, 2017 |
