화학공학소재연구정보센터
Journal of Crystal Growth, Vol.498, 140-147, 2018
Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC
A set of numerical simulations were conducted to investigate the effect of applied static magnetic field on the convective flows and carbon concentration in the Top-Seeded Solution Growth (TSSG) process of SiC. The applied magnetic field is considered as vertical and cusp in an axisyrnmetric configuration. Seed rotation was also included in the simulations. The numerical results show that the applications of VMF (vertical magnetic field) and weak CMF (cusp magnetic field) are effective in suppressing Marangoni convection. The application of VMF slows down growth rate but reduces the variation of growth rate towards a more constant rate. Seed rotation appears to be not beneficial in the presence of CMF alone. However, the combined effect of seed rotation with VMF enhances growth and makes the growth rate variation smaller.