| 1 |
Mediating interaction strength between nickel and zirconia using a mixed oxide nanosheets interlayer for methane dry reforming
Tathod AP, Hayek N, Shpasser D, Simakov DSA, Gazit OM
Applied Catalysis B: Environmental, 249, 106, 2019 |
| 2 |
Oxygen influence in the magnetic and the transport properties of ferroelectric/ferromagnetic heterostructures
Sutter JG, Nener L, Navarro H, Leyva G, Fusil S, Bouzehouane K, Haberkorn N, Sirena M
Thin Solid Films, 639, 42, 2017 |
| 3 |
On interface properties of ultra-thin and very-thin oxide/a-Si : H structures prepared by oxygen based plasmas and chemical oxidation
Pincik E, Kobayashi H, Hajossy R, Gleskova H, Takahashi M, Jergel M, Brunner R, Ortega L, Kucera M, Kral M, Rusnak J
Applied Surface Science, 253(16), 6697, 2007 |
| 4 |
Interface defect generation probed by low voltage stress induced leakage current
Yu YJ, Guo Q, Zeng X, Li H, Liu SH, Zou SC
Thin Solid Films, 504(1-2), 307, 2006 |
| 5 |
A capacitance-voltage model for polysilicon-gated MOS devices including substrate quantization effects based on modification of the total semiconductor charge
Vogel EM, Richter CA, Rennex BG
Solid-State Electronics, 47(9), 1589, 2003 |
| 6 |
Modeling of stress-induced leakage current and impact ionization in MOS devices
Ielmini D, Spinelli AS, Lacaita AL, Ghidini G
Solid-State Electronics, 46(3), 417, 2002 |
| 7 |
Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure in different gas atmospheres
Beichele M, Bauer AJ, Herden M, Ryssel H
Solid-State Electronics, 45(8), 1383, 2001 |
| 8 |
The search for cathode and anode traps in high-voltage stressed silicon oxides
Chen L, Kang CS, Oralkan O, Dumin DJ, Brown GA, Bellutti P
Journal of the Electrochemical Society, 145(4), 1292, 1998 |
| 9 |
Plasma-Induced Gate-Oxide Charging Issues for Sub-0.5 Mu-M Complementary Metal-Oxide-Semiconductor Technologies
Stamper AK, Lasky JB, Adkisson JW
Journal of Vacuum Science & Technology A, 13(3), 905, 1995 |
