검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
MOS hydrogen sensor with very fast response based on ulitra-thin thermal SiO2 film Lu C, Chen Z International Journal of Hydrogen Energy, 35(22), 12561, 2010 |
| 2 |
Electrochemiluminoimmunoassay of hTSH at disposable oxide-coated n-silicon electrodes Helin M, Vare L, Hakansson M, Canty P, Hedman HP, Heikkila L, Ala-Kleme T, Kankare J, Kulmala S Journal of Electroanalytical Chemistry, 524, 176, 2002 |
| 3 |
In-situ detection of stress in oxide films during Si electrodissolution in acidic fluoride electrolytes Cattarin S, Decker F, Dini D, Margesin B Journal of Electroanalytical Chemistry, 474(2), 182, 1999 |
| 4 |
Octadecyltrichlorosilane self-assembled-monolayer islands as a self-patterned-mask for HF etching of SiO2 on Si Komeda T, Namba K, Nishioka Y Journal of Vacuum Science & Technology A, 16(3), 1680, 1998 |
| 5 |
In situ measurements of ultrathin silicon oxide dissolution rates Chopra D, Suni II Thin Solid Films, 323(1-2), 170, 1998 |
| 6 |
Low-Field Trap Generation Dependence on the Injection Current-Density in Gate Insulators - How Valid Are Accelerated Hot-Electron Measurements Kim HS, Reisman A, Williams CK Journal of the Electrochemical Society, 144(7), 2517, 1997 |
| 7 |
Thickness Dependence of Oxide Wearout Dumin DJ Journal of the Electrochemical Society, 143(11), 3736, 1996 |
| 8 |
Voltage and Fluence Dependence of Stress-Generated Traps Inside Thin Silicon-Oxide Scott RS, Subramonium R, Dumin DJ Journal of the Electrochemical Society, 142(3), 930, 1995 |
| 9 |
Wearout and Breakdown in Thin Silicon-Oxide Dumin DJ Journal of the Electrochemical Society, 142(4), 1272, 1995 |
| 10 |
Evidence for Nonuniform Trap Distributions in Thin Oxides After High-Voltage Stressing Dumin DJ, Vanchinathan S, Mopuri S, Subramoniam R Journal of the Electrochemical Society, 142(6), 2055, 1995 |