검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Variation of poly-Si grain structures under thermal annealing and its effect on the performance of TiN/Al2O3/Si3N4/SiO2/poly-Si capacitors Hong SB, Park JH, Lee TH, Lim JH, Shin C, Park YW, Kim TG Applied Surface Science, 477, 104, 2019 |
| 2 |
Improvement of the multi-level cell performance by a soft program method in flash memory devices Park JK, Lee KH, Pyi SH, Lee SH, Cho BJ Solid-State Electronics, 94, 86, 2014 |
| 3 |
Modeling the geometric effects on programming characteristics for the TANOS device by developing a 3D self-consistent simulation Jeon KS, Choe KS, Choi S, Park SY, Park YJ Solid-State Electronics, 79, 117, 2013 |
| 4 |
Charge-based nonvolatile memory: Near the end of the roadmap? Van Houdt J Current Applied Physics, 11(2), E21, 2011 |
| 5 |
Investigation of charge-trap memories with AlN based band engineered storage layers Molas G, Colonna JP, Kies R, Belhachemi D, Bocquet M, Gely M, Vidal V, Brianceau P, Martinez E, Papon AM, Licitra C, Vandroux L, Ghibaudo G, De Salvo B Solid-State Electronics, 58(1), 68, 2011 |
| 6 |
Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation Suhane A, Cacciato A, Richard O, Arreghini A, Adelmann C, Swerts J, Rothschild O, Van den Bosch G, Breuil L, Bender H, Jurczak M, Debusschere I, Kittl JA, De Meyer K, Van Houdt J Solid-State Electronics, 65-66, 177, 2011 |
| 7 |
Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances Gerardi C, Tripiciano E, Cina G, Lombardo S, Garozzo C, Corso D, Betro G, Pace C, Crupi F Solid-State Electronics, 54(11), 1319, 2010 |