This paper presents the investigation of the electrical properties of charge-trap memories with AlN based storage layers. The memory performance and reliability are studied in details and compared with the ones of a reference device using standard Si3N4 as storage layer. An engineered charge trapping layer is also proposed, made by an AlN/Si3N4 double layer, which shows reduced program/erase voltages, combined with 10(6) excellent endurance and good retention (Delta V-T > 5 V after 10 years at 125 degrees C). (C) 2010 Elsevier Ltd. All rights reserved.