1 |
Chlorine-enhanced thermal oxides growth and significant trap density reduction at SiO2/SiC interface by incorporation of phosphorus Krol K, Sochacki M, Strupinski W, Racka K, Guziewicz M, Konarski P, Misnik M, Szmidt J Thin Solid Films, 591, 86, 2015 |
2 |
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers Gelczuk L, Dabrowska-Szata M, Sochacki M, Szmidt J Solid-State Electronics, 94, 56, 2014 |
3 |
Application of scanning microscopy to study correlation between thermal properties and morphology of BaTiO3 thin films Kazmierczak-Balata A, Bodzenta J, Krzywiecki M, Juszczyk J, Szmidt J, Firek P Thin Solid Films, 545, 217, 2013 |
4 |
Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC Caban P, Strupinski W, Szmidt J, Wojcik M, Gaca J, Kelekci O, Caliskan D, Ozbay E Journal of Crystal Growth, 315(1), 168, 2011 |
5 |
Evolution of optical properties with deposition time of silicon nitride and diamond-like carbon films deposited by radio-frequency plasma-enhanced chemical vapor deposition method Smietana M, Bock WJ, Szmidt J Thin Solid Films, 519(19), 6339, 2011 |
6 |
Influence of surface cleaning effects on properties of Schottky diodes on 4H-SiC Kwietniewski N, Sochacki M, Szmidt J, Guziewicz M, Kaminska E, Piotrowska A Applied Surface Science, 254(24), 8106, 2008 |
7 |
The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates Caban P, Kosciewicz K, Strupinski W, Wojcik M, Gaca J, Szmidt J, Ozturk M, Ozbay E Journal of Crystal Growth, 310(23), 4876, 2008 |
8 |
Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures Sochacki M, Kolendo A, Szmidt J, Werbowy A Solid-State Electronics, 49(4), 585, 2005 |
9 |
Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes Sochacki M, Szmidt J Thin Solid Films, 446(1), 106, 2004 |
10 |
Peculiarities of thin film deposition by means of reactive impulse plasma assisted chemical vapor deposition (RIPACVD) method Werbowy A, Olszyna A, Zdunek K, Sokolowska A, Szmidt J, Barcz A Thin Solid Films, 459(1-2), 160, 2004 |