Pt/4H-SiC Schottky diodes were fabricated and their current-voltage (I V) characteristics within the temperature range of 300480 K were subsequently measured and analyzed. Diodes' parameters (barrier height, ideality factor and series resistance) were extracted from the I-V curves using Cheung's method. Based on I V and high-frequency capacitance-voltage (C-V) measurements the interface states distribution in the semiconductor bandgap was determined. Analysis of obtained results indicates the presence of thin interfacial layer between metal and semiconductor. (C) 2005 Elsevier Ltd. All rights reserved.